ALD-MLD: By combining ALD technology to manufacture high-quality inorganic nano-thin films at low temperatures and MLD technology to manufacture high-quality organic molecular thin films using molecular self-assembly in the gas phase, we aim to manufacture high-quality organic-inorganic nano-thin composite thin films and to manufacture ideal composite thin films that can be applied to surface modification of unit structures by controlling functional groups.

AS-ALD: As the scope of application of 3D semiconductor technology has been expanded, research on further improvement of the degree of integration is being actively conducted. We aim to develop a vertically accurate and simple ultra-fine patterning process technology that can effectively fabricate 3D vertical nanostructures for further improvement of the degree of integration.

The purpose of semiconductor material development varies across different areas. FET materials aim for high performance and speed enhancements, while thermoelectric materials focus on efficient energy conversion between heat and electricity to boost energy efficiency. EUV photoresists support the fabrication of high-resolution chips by enabling fine patterning and aiding in the production of high-performance chips. These materials play a crucial role in pursuing performance improvements and efficiency enhancements within the semiconductor industry.